Phase change memory device having decentralized driving units

Details Phase change memory device having decentralized driving units Phase change memory device having decentralized driving units

2011-06-07

2011-06-07

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S185230, C365S185250, C365S063000

Reexamination Certificate

active

07957180

ABSTRACT:
A phase change memory device includes a plurality of intersecting bit lines and word lines. A cell array including a plurality of unit phase change resistance cells is formed at intersections of the plurality of bit lines and the plurality of word lines. A plurality of sub word line driving units are configured to drive the word lines in response to a plurality of sub word line signals. A plurality of main word line driving units are configured to drive the sub word line driving units in response to a main word line signal. A precharge unit is configured to precharge the word lines. In the phase change memory device, the driving units are decentralized.

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