Phase change memory device having a plurality of reference...

Details Phase change memory device having a plurality of reference... Phase change memory device having a plurality of reference...

2008-06-05

2010-06-15

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07738288

ABSTRACT:
A phase change memory device includes a cell array unit including a phase change resistance cell positioned at an intersection of a word line and a bit line. A plurality of sense amplifiers sense and amplify data of the phase change resistance cell selected using a plurality of reference currents. A plurality of comparing units compare an output signal of the corresponding sense amplifier with that of the neighboring sense amplifier so as to output a flag enable signal.

REFERENCES:
patent: 7359231 (2008-04-01), Venkataraman et al.
patent: 2005/0068804 (2005-03-01), Choi et al.
patent: 2006/0109704 (2006-05-01), Seo et al.
patent: 2006/0221712 (2006-10-01), Lowrey et al.
patent: 2005-0102952 (2005-10-01), None

Affiliated with

Also associated with

Rating

Phase change memory device having a plurality of reference... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase change memory device having a plurality of reference..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase change memory device having a plurality of reference... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4182719