Phase change memory device for use in a burst read operation...

Details Phase change memory device for use in a burst read operation... Phase change memory device for use in a burst read operation...

2007-10-09

2007-10-09

Mai, Son L. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S238500

Reexamination Certificate

active

11184184

ABSTRACT:
A phase change memory device for use in a burst read operation and a data reading method are provided. The memory device includes a plurality of bit lines and a plurality of word lines. A memory cell array block has a plurality of phase change memory cells that are connected to cross points of the plurality of bit lines and the plurality of word lines. A sense amplifier block is connected to corresponding bit lines, and latches data of memory cells connected to the same word line simultaneously during a burst read operation, and then provides the latched data in response to a column address.

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