Phase-change memory device capable of preprogramming memory...

Details Phase-change memory device capable of preprogramming memory... Phase-change memory device capable of preprogramming memory...

2006-09-12

2006-09-12

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S113000, C365S148000, C365S215000

Reexamination Certificate

active

07106622

ABSTRACT:
In an embodiment, a phase change non-volatile memory includes a number of memory cells. The memory cells include a phase change material which may transition between two memory states. The phase change material has different electrical properties in different states. The memory cells may be electrically addressable and include a transistor in each cell to electrically read and write data to the cell. An energy beam may be used to pre-program the device by heating selected memory cells, and consequently changing the state of the phase change material.

REFERENCES:
patent: 5051950 (1991-09-01), Evans et al.
patent: 6317392 (2001-11-01), Lee et al.
patent: 2005/0259498 (2005-11-01), Nangle

Affiliated with

Also associated with

Rating

Phase-change memory device capable of preprogramming memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase-change memory device capable of preprogramming memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase-change memory device capable of preprogramming memory... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3613325