Phase-change memory device capable of improving contact...

Details Phase-change memory device capable of improving contact... Phase-change memory device capable of improving contact...

2011-06-21

2011-06-21

Dickey, Thomas L (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S102000, C257S004000, C257SE45002, C257SE21663

Reexamination Certificate

active

07964498

ABSTRACT:
A phase-change memory device and a method of manufacturing the same, wherein the phase-change memory device includes a semiconductor substrate having a switching device, a phase-change layer formed on the semiconductor substrate having the switching device to change a phase thereof as the switching device is driven, and a bottom electrode contact in contact with the switching device through a first contact area and in contact with the phase-change layer through a second contact area, which is smaller than the first contact area.

REFERENCES:
patent: 2007/0210348 (2007-09-01), Song et al.
patent: 2008/0003815 (2008-01-01), Lee et al.
patent: 1020060082510 (2006-07-01), None
patent: 100655082 (2006-12-01), None
patent: 1020060124290 (2006-12-01), None
patent: 1020080035212 (2008-04-01), None

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