Phase-change memory device and method of manufacturing the same

Details Phase-change memory device and method of manufacturing the same Phase-change memory device and method of manufacturing the same

2008-06-30

2009-06-30

Parker, Kenneth A (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S102000, C257SE45002

Reexamination Certificate

active

07553692

ABSTRACT:
Disclosed are a phase-change memory device and its manufacturing method, which can reduce a contact area between a bottom electrode and a phase-change layer, thereby reducing the quantity of current necessary for phase change. The phase-change memory device comprises: a bottom electrode formed on a contact plug; a phase-change layer formed on the bottom electrode and having a shape of a character ‘π’; and a top electrode formed on the phase-change layer.

REFERENCES:
patent: 6117720 (2000-09-01), Harshfield
patent: 6300684 (2001-10-01), Gonzalez et al.
patent: 7049623 (2006-05-01), Lowrey
patent: 7199444 (2007-04-01), Moore et al.
patent: 2005/0019975 (2005-01-01), Lee et al.
patent: 2006/0148125 (2006-07-01), Horii et al.

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