Phase-change memory device and method of manufacturing the same

Details Phase-change memory device and method of manufacturing the same Phase-change memory device and method of manufacturing the same

2004-11-30

2008-08-05

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S003000, C257S774000, C257SE45002

Reexamination Certificate

active

07408181

ABSTRACT:
Disclosed are a phase-change memory device and its manufacturing method, which can reduce a contact area between a bottom electrode and a phase-change layer, thereby reducing the quantity of current necessary for phase change. The phase-change memory device comprises: a bottom electrode formed on a contact plug; a phase-change layer formed on the bottom electrode and having a shape of a character ‘π’; and a top electrode formed on the phase-change layer.

REFERENCES:
patent: 6300684 (2001-10-01), Gonzalez et al.
patent: 7049623 (2006-05-01), Lowrey
patent: 2005/0019975 (2005-01-01), Lee et al.
patent: 10-2004 0038422 (2004-05-01), None

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