Phase change memory device and method of manufacturing

Details Phase change memory device and method of manufacturing Phase change memory device and method of manufacturing

2007-09-04

2007-09-04

Hoang, Quoc (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C438S095000, C257SE27004

Reexamination Certificate

active

11028841

ABSTRACT:
A method of manufacturing a memory device including forming an electrode over a substrate, then forming a dielectric feature proximate a contact region of a sidewall of the electrode, and then forming a phase change feature proximate the contact region.

REFERENCES:
patent: 6252244 (2001-06-01), Reinberg
patent: 6511862 (2003-01-01), Hudgens et al.
patent: 6512241 (2003-01-01), Lai
patent: 6512242 (2003-01-01), Fan et al.
patent: 6531373 (2003-03-01), Gill et al.
patent: 6607974 (2003-08-01), Harshfield
patent: 6635951 (2003-10-01), Zahorik
patent: 6649928 (2003-11-01), Dennison
patent: 7038261 (2006-05-01), Horii
patent: 2004/0248339 (2004-12-01), Lung
patent: 2005/0042862 (2005-02-01), Zahorik
patent: 2006/0001164 (2006-01-01), Chang

Affiliated with

Also associated with

Rating

Phase change memory device and method of manufacturing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase change memory device and method of manufacturing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase change memory device and method of manufacturing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3773069