Phase change memory device and method of manufacture

Details Phase change memory device and method of manufacture Phase change memory device and method of manufacture

2011-01-11

2011-01-11

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S003000, C257S528000, C257SE45002, C257SE47001, C257SE47005, C438S095000, C438S102000

Reexamination Certificate

active

07868313

ABSTRACT:
A phase change memory control ring lower electrode is disclosed. The lower electrode includes an outer ring electrode in thermal contact with a phase change memory element, an inner seed layer disposed within the outer ring electrode and in contact with the phase change memory element, and an electrically conductive bottom layer coupled to the outer ring electrode.

REFERENCES:
patent: 4845533 (1989-07-01), Pryor et al.
patent: 7113474 (2006-09-01), Ovshinsky et al.
patent: 2007/0075347 (2007-04-01), Lai et al.
patent: 2007/0158631 (2007-07-01), Daley et al.
patent: 2007/0215852 (2007-09-01), Lung
patent: 2008/0173858 (2008-07-01), An et al.
patent: 2008/0179585 (2008-07-01), Hsu
patent: 2008/0210924 (2008-09-01), Shin
patent: 2009/0008621 (2009-01-01), Lin et al.

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