Phase change memory device and method of forming the same

Details Phase change memory device and method of forming the same Phase change memory device and method of forming the same

2007-06-27

2010-10-12

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE45002

Reexamination Certificate

active

07812332

ABSTRACT:
A phase change memory device includes a current restrictive element interposed between an electrically conductive element and a phase change material. The current restrictive element includes a plurality of overlapping film patterns, each of which having a respective first portion proximal to the conductive element and a second portion proximal to the phase change material. The second portions are configured and dimensioned to have higher resistance than the first portions.

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patent: 2005/0003602 (2005-01-01), Lowrey et al.
patent: 2008/0121862 (2008-05-01), Liu
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patent: 1 331 675 (2003-07-01), None
patent: 10-2006-0016312 (2006-02-01), None
Korean Patent Publication (English abstract) Publication No.: 1020060016312.

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