Phase change memory device and method of forming the same

Details Phase change memory device and method of forming the same Phase change memory device and method of forming the same

2007-10-16

2009-12-29

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257S289000, C257SE29276, C338S013000, C365S100000, C365S148000, C438S197000, C438S900000

Reexamination Certificate

active

07638788

ABSTRACT:
Provided are a phase change memory device and a method of forming the same. According to the phase change memory, a first plug electrode and a second plug electrode are spaced apart from each other in a mold insulating layer. A phase change pattern is disposed on the mold insulating layer. The phase change pattern contacts a top of the first plug electrode and a first potion of a top of the second plug electrode. An interconnection is electrically connected to a second portion of the top of the second plug electrode.

REFERENCES:
patent: 6744088 (2004-06-01), Dennison
patent: 6815704 (2004-11-01), Chen
patent: 6936840 (2005-08-01), Sun et al.
patent: 7038230 (2006-05-01), Chen et al.
patent: 7075131 (2006-07-01), Chen
patent: 2005/0110983 (2005-05-01), Jeong et al.
patent: 2006/0024429 (2006-02-01), Horii
patent: 2007/0170413 (2007-07-01), Matsui et al.
patent: 2008/0026535 (2008-01-01), Yang et al.
patent: 1020040050115 (2002-01-01), None
patent: 1020050038422 (2005-04-01), None
patent: 1020050049810 (2005-05-01), None
patent: 1020040050123 (2006-01-01), None
patent: 1020060012182 (2006-02-01), None

Affiliated with

Also associated with

Rating

Phase change memory device and method of forming the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase change memory device and method of forming the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase change memory device and method of forming the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4120261