Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-19
2006-12-19
Trinh, Michael (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S002000, C257S004000, C257S536000
Reexamination Certificate
active
07151300
ABSTRACT:
Disclosed are a phase-change memory device and its manufacturing method, which can reduce a contact area between a bottom electrode and a phase-change layer, thereby reducing the quantity of current necessary for phase change. The phase-change memory device comprises: bottom electrodes and top electrodes formed on a dielectric interlayer, each of the bottom electrodes and the top electrodes having both side surfaces in contact with a first oxide layer, a phase-change layer, a nitride layer, and a second oxide layer; the phase-change layer formed between the first oxide layer and the nitride layer while being in contact with the side surfaces of the bottom electrodes and the top electrodes; a third oxide layer formed on the bottom electrodes and the top electrode; and a metal wire in contact with the top electrode.
REFERENCES:
patent: 5920788 (1999-07-01), Reinberg
patent: 7049623 (2006-05-01), Lowrey
patent: 2003/0209746 (2003-11-01), Horii
patent: 2005/0127347 (2005-06-01), Choi et al.
patent: 10-20040022275 (2004-03-01), None
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Trinh Michael
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