Phase change memory device and method for forming the same

Details Phase change memory device and method for forming the same Phase change memory device and method for forming the same

2008-03-04

2008-03-04

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S004000, C257S005000, C365S151000, C365S163000, C438S095000, C438S900000

Reexamination Certificate

active

11149755

ABSTRACT:
A phase change memory device includes a mold layer disposed on a substrate, a heating electrode, a filling insulation pattern and a phase change material pattern. The heating electrode is disposed in an opening exposing the substrate through the mold layer. The heating electrode is formed in a substantially cylindrical shape, having its sidewalls conformally disposed on the lower inner walls of the opening. The filling insulation pattern fills an empty region surrounded by the sidewalls of the heating electrode. The phase change material pattern is disposed on the mold layer and downwardly extended to fill the empty part of the opening. The phase change material pattern contacts the top surfaces of the sidewalls of the heating electrode.

REFERENCES:
patent: 6031287 (2000-02-01), Harshfield
patent: 6420725 (2002-07-01), Harshfield
patent: 6534781 (2003-03-01), Dennison
patent: 6545287 (2003-04-01), Chiang
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patent: 6985377 (2006-01-01), Rust
patent: 7242019 (2007-07-01), Wicker
patent: 2002/0017701 (2002-02-01), Klersy et al.
patent: 04-32955 (2004-04-01), None

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