4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Bulk effect device
  6. Bulk effect switching in amorphous material

Samsung Electronics Col Ltd.

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Phase change memory device and method for forming the same

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

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Phase change memory device and method for forming the same

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

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