Phase change memory device

Details Phase change memory device Phase change memory device

2011-04-19

2011-04-19

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000

Reexamination Certificate

active

07929339

ABSTRACT:
A phase change memory device includes a plurality of word lines arranged in a row direction and a plurality of bit lines arranged in a column direction. A plurality of reference bit line and a plurality of clamp bit lines are arranged in the column direction. A cell array block including a phase change resistance cell is arranged where a word line and a bit line intersect. A reference cell array block is formed where a word line and the reference bit line intersect. The reference cell array block is configured to output a reference current. A clamp cell array block is formed where a word line and a clamp bit line intersect. The clamp cell array block is configured to output a clamp current. A sense amplifier is connected to each of the bit lines and is configured to receive a clamp voltage and a reference voltage.

REFERENCES:
patent: 6982913 (2006-01-01), Oh et al.
patent: 7433253 (2008-10-01), Gogl et al.
patent: 7539068 (2009-05-01), Wang et al.
patent: 2006/0209585 (2006-09-01), Tanizaki et al.
patent: 2006/0221678 (2006-10-01), Bedeschi et al.
patent: 2007/0103972 (2007-05-01), Ro et al.

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