Phase change memory device

Details Phase change memory device Phase change memory device

2008-06-16

2011-11-08

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000

Reexamination Certificate

active

08054679

ABSTRACT:
A phase change memory device comprises: a phase change element for rewritably storing data by changing a resistance state; a memory cell arranged at an intersection of a word line and a bit line and formed of the phase change element and a diode connected in series; a select transistor formed in a diffusion layer below the memory cell, for selectively controlling electric connection between an anode of the diode and a ground line in response to a potential of the word line connected to a gate; and a precharge circuit for precharging the diffusion layer below the memory cell corresponding to a non-selected word line to a predetermined voltage and for disconnecting the diffusion layer below the memory cell corresponding to a selected word line from the predetermined voltage.

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patent: 2006/0097343 (2006-05-01), Parkinson
patent: 2008/0211539 (2008-09-01), Parkinson

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