Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2011-02-17
2011-12-13
Lam, David (Department: 2827)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S148000, C365S189011, C365S189050
Reexamination Certificate
active
08077507
ABSTRACT:
A phase-change memory device includes a data write control unit configured to generate write control signals according to a data combination of a plurality of input data and output write control codes with a code update period controlled according to an activation period of one of the write control signal, and a data write unit configured to output a program current in response to the write control signals and control a level of the program current according to a code combination of the write control codes.
REFERENCES:
patent: 7349245 (2008-03-01), Kim et al.
patent: 7499316 (2009-03-01), Choi et al.
patent: 7916525 (2011-03-01), Park
Hynix / Semiconductor Inc.
IP & T Group LLP
Lam David
LandOfFree
Phase-change memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Phase-change memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase-change memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4259977