Phase change memory device

Details Phase change memory device Phase change memory device

2008-02-22

2010-06-15

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000

Reexamination Certificate

active

07738290

ABSTRACT:
A phase change memory device has a memory cell that uses a phase change film as a storage element, and includes: a first phase change region formed on a side of one face of the phase change film; and a second phase change region formed on a side of another face of the phase change film in a position that corresponds to the first phase change region, wherein the phase change memory stores two-bit data using combinations of a high resistance state due to amorphization and a low resistance state due to crystallization in the first phase change region with the high resistance state and the low resistance state in the second phase change region, the resistance value of the low resistance state being lower than that of the high resistance state.

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Masahiro Okuda, Editor, “Technology and Materials for Future Optical Memories”, CMC Publishing Co., Ltd., pp. 89-90, Jan. 31, 2004.
Chinese Patent Office issued a Chinese Office Action dated Jun. 5, 2009, Application No. 200810096348.X.

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