Phase change memory cell with junction selector and...

Details Phase change memory cell with junction selector and... Phase change memory cell with junction selector and...

2005-12-19

2008-10-14

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S148000

Reexamination Certificate

active

07436692

ABSTRACT:
A memory cell includes a memory element and a selection element coupled to the memory element. The selection element includes a first junction portion, having a first type of conductivity, and a second junction portion, having a second type of conductivity and forming a rectifying junction with the first junction portion. The first junction portion and the second junction portion are made of materials selected in the group consisting of: chalcogenides and conducting polymers.

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Tohge, N., et al., “Formation of Chalcogenide Glassp-nJunctions,”Appl. Phys. Lett., 48(25):1739-1741, Jun. 23, 1986.

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