Phase change memory cell defined by a pattern shrink...

Details Phase change memory cell defined by a pattern shrink... Phase change memory cell defined by a pattern shrink...

2007-01-23

2007-01-23

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C438S646000

Reexamination Certificate

active

11101974

ABSTRACT:
One embodiment of the present invention provides a memory cell device. The memory cell device includes a first electrode, a phase-change material adjacent the first electrode, and a second electrode adjacent the phase-change material. The phase-change material has a sublithographic width defined by a pattern shrink material process.

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