Phase-change memory cell and method of fabricating the...

Details Phase-change memory cell and method of fabricating the... Phase-change memory cell and method of fabricating the...

2005-08-30

2005-08-30

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

C257S485000

Reexamination Certificate

active

06936840

ABSTRACT:
A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change material layer formed on a surface of the first electrode layer in the first opening, and an electrically conductive layer including a first portion formed on the stencil layer and defining a second electrode layer and a second portion formed on the phase-change material layer.

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