Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-03-22
2011-03-22
McPherson, John A. (Department: 1721)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE45002, C257SE45001, C257SE47005, C216S018000, C427S058000, C438S694000
Reexamination Certificate
active
07910910
ABSTRACT:
A memory cell (and method of fabricating the memory cell) includes a stencil layer having a first opening, a phase-change material layer formed on a first electrode layer, and an electrically conductive layer formed on the first electrode layer, the electrically conductive layer having a pillar-shaped portion which is formed on the phase-change material layer and fills the first opening.
REFERENCES:
patent: 5217916 (1993-06-01), Anderson et al.
patent: 5536947 (1996-07-01), Klersy et al.
patent: 5687112 (1997-11-01), Ovshinsky
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: 6147395 (2000-11-01), Gilgen
patent: 6150253 (2000-11-01), Doan et al.
patent: 6287919 (2001-09-01), Zahorik
patent: 6316784 (2001-11-01), Zahorik et al.
patent: 6507061 (2003-01-01), Hudgens et al.
patent: 6674115 (2004-01-01), Hudgens et al.
patent: 6936840 (2005-08-01), Sun et al.
patent: 7459266 (2008-12-01), Sun et al.
patent: 2001/0034078 (2001-10-01), Zahorik et al.
patent: 2002/0187260 (2002-12-01), Sheppard et al.
Raoux Simone
Sun Jonathan Zanhung
Wickramasinghe Hemantha
International Business Machines - Corporation
Kaufman, Esq. Stephen C.
McGinn IP Law Group PLLC
McPherson John A.
LandOfFree
Phase-change memory cell and method of fabricating the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Phase-change memory cell and method of fabricating the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase-change memory cell and method of fabricating the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2645502