Phase change memory cell and manufacturing method thereof...

Details Phase change memory cell and manufacturing method thereof... Phase change memory cell and manufacturing method thereof...

2005-05-10

2005-05-10

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000

Reexamination Certificate

active

06891747

ABSTRACT:
The phase change memory cell is formed by a resistive element and by a memory region of a phase change material. The resistive element has a first thin portion having a first sublithographic dimension in a first direction; and the memory region has a second thin portion having a second sublithographic dimension in a second direction transverse to the first dimension. The first thin portion and the second thin portion are in direct electrical contact and define a contact area of sublithographic extension. The second thin portion is delimited laterally by oxide spacer portions surrounded by a mold layer which defines a lithographic opening. The spacer portions are formed after forming the lithographic opening, by a spacer formation technique.

REFERENCES:
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 5814527 (1998-09-01), Wolstenholme et al.
patent: 5952671 (1999-09-01), Reinberg et al.
patent: 5970336 (1999-10-01), Wolstenholme et al.
patent: 6031287 (2000-02-01), Harshfield
patent: 20010002046 (2001-05-01), Reinberg et al.
patent: 20020017701 (2002-02-01), Klersy et al.
patent: 20030075778 (2003-04-01), Klersey
patent: 20040012009 (2004-01-01), Casagrande et al.
patent: WO 0057498 (2000-09-01), None
patent: WO 0209206 (2002-01-01), None
Palun, L. et al., “Fabrication of Single Electron Devices by Hybrid (E-Beam/DUV) Lithography,”Microelectronic Engineering53:167-170, 2000.
U.S. Appl. No. 09/276,273, filed Mar. 25, 1999, name Klersy.

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