Phase change memory array circuits and methods of manufacture

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S148000

Reexamination Certificate

active

07839672

ABSTRACT:
A memory array includes cells with switches and phase-change elements that are in communication with the switches. Bit lines are in communication with the cells. Word lines are in communication with the cells. Different voltage source terminals each receive a respective source voltage. The different voltage source terminals are coupled to and supply current to at least one of the cells.

REFERENCES:
patent: 6314014 (2001-11-01), Lowrey et al.
patent: 7057923 (2006-06-01), Furkay et al.
patent: 7173271 (2007-02-01), Chang
patent: 7223693 (2007-05-01), Choi et al.
patent: 7227776 (2007-06-01), Cho et al.
patent: 7232703 (2007-06-01), Morita et al.
patent: 7539048 (2009-05-01), Farnworth
patent: 7729161 (2010-06-01), Lung et al.
patent: 2006/0018175 (2006-01-01), Liljedahl et al.
patent: 2006/0198183 (2006-09-01), Kawahara et al.
patent: 2007/0153616 (2007-07-01), Kim et al.
patent: 2007/0155172 (2007-07-01), Lai et al.
patent: 2008/0025077 (2008-01-01), Scheuerlein et al.
patent: 2009/0034320 (2009-02-01), Ueda
patent: 2009/0067226 (2009-03-01), Lankhorst et al.
patent: 2009/0237984 (2009-09-01), Porter
patent: 2010/0008133 (2010-01-01), Cho et al.
patent: 2010/0020595 (2010-01-01), Parkinson et al.

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