Phase change memory and method of fabricating the same

Details Phase change memory and method of fabricating the same Phase change memory and method of fabricating the same

2011-04-26

2011-04-26

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S652000, C438S787000

Reexamination Certificate

active

07932102

ABSTRACT:
A method of fabricating a phase change memory includes forming a lower electrode on a semiconductor substrate, forming a phase change pattern, an upper electrode, and a hard mask pattern sequentially on the lower electrode, a width of a bottom surface of the hard mask pattern being greater than a width of a top surface of the hard mask pattern, the bottom surface of the hard mask pattern facing the upper electrode and being opposite the top surface of the hard mask pattern, and forming a capping layer to cover the top surface of the hard mask pattern and sidewalls of the hard mask pattern, phase change pattern, and upper electrode.

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