Phase-change memory and method having restore function

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S148000, C365S113000

Reexamination Certificate

active

07042760

ABSTRACT:
A phase-change memory device includes a phase-change memory cell having a volume of material which is programmable between amorphous and crystalline states. A write current source selectively applies a first write current pulse to program the phase-change memory cell into the amorphous state and a second write current pulse to program the phase-change memory cell into the crystalline state. The phase-change memory device further includes a restore circuit which selectively applies the first current pulse to the phase-change memory cell to restore at least an amorphous state of the phase-change memory cell.

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