Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2006-05-09
2006-05-09
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S148000, C365S113000
Reexamination Certificate
active
07042760
ABSTRACT:
A phase-change memory device includes a phase-change memory cell having a volume of material which is programmable between amorphous and crystalline states. A write current source selectively applies a first write current pulse to program the phase-change memory cell into the amorphous state and a second write current pulse to program the phase-change memory cell into the crystalline state. The phase-change memory device further includes a restore circuit which selectively applies the first current pulse to the phase-change memory cell to restore at least an amorphous state of the phase-change memory cell.
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Ahn Su-jin
Hwang Young-nam
Kim Ki-nam
Auduong Gene N.
Volentine Francos & Whitt PLLC
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