Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-10-24
2009-08-04
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S246000, C257SE45002, C438S282000, C438S622000
Reexamination Certificate
active
07569845
ABSTRACT:
A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.
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Chen Yi-Chan
Wang Wen-Han
Dang Phuc T
Industrial Technology Research Institute
Nanya Technology Corporation
Powerchip Semiconductor Corp.
ProMOS Technologies Inc.
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