Phase change memory adaptive programming

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S189160

Reexamination Certificate

active

07821810

ABSTRACT:
Some embodiments include methods and apparatus having a module configured to program a memory cell using a signal to cause the memory cell to have a programmed resistance value, to adjust a programming parameter value of the signal if the programmed resistance value is outside a target resistance value range, and to repeat at least one of the programming and the adjusting if the programmed resistance value is outside the target resistance value range, the signal including a different programming parameter value each time the programming is repeated.

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patent: 6671710 (2003-12-01), Ovshinsky et al.
patent: 7106622 (2006-09-01), Nangle
patent: 7236393 (2007-06-01), Cho et al.
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patent: 2003/0128568 (2003-07-01), Nangle
patent: 2006/0087877 (2006-04-01), Cho
patent: 2006/0268603 (2006-11-01), Nangle
patent: 2007/0047296 (2007-03-01), Philipp et al.
patent: 2007/0153570 (2007-07-01), Suh
patent: 2007/0206410 (2007-09-01), Sutardja
patent: 2008/0316792 (2008-12-01), Philipp
patent: WO-2009114200 (2009-09-01), None
“International Application Serial No. PCT/US2009/001638, Search Report mailed Jul. 2, 2009”.
“International Application Serial No. PCT/US2009/001638, Written Opinion mailed Jul. 2, 2009”.

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