Phase change memory

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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Details

C365S148000

Reexamination Certificate

active

07729163

ABSTRACT:
The present disclosure includes devices and methods for operating phase change memory cells. One or more embodiments include applying a programming signal to a phase change material of a memory cell, and decreasing a magnitude of a trailing portion of the applied programming signal successively according to a number of particular decrements. The magnitude and the duration of the number of particular decrements correspond to particular programmed values.

REFERENCES:
patent: 6570784 (2003-05-01), Lowrey
patent: 6873538 (2005-03-01), Hush
patent: 6928022 (2005-08-01), Cho et al.
patent: 6930909 (2005-08-01), Moore et al.
patent: 6954385 (2005-10-01), Casper et al.
patent: 7274586 (2007-09-01), Choi et al.
patent: 7436693 (2008-10-01), Kang et al.
patent: 2003/0067013 (2003-04-01), Ichihara et al.
patent: 2003/0123277 (2003-07-01), Lowrey et al.
patent: 2007/0189065 (2007-08-01), Suh et al.
patent: 10-2005-0046041 (2005-05-01), None
patent: 00/30101 (2000-05-01), None
Bedeschi, F, et al. “Set and Reset Pulse Characterization in BJT-Selected Phase-Change Memories,” IEEE, International Symposium on Circuits and Systems, pp. 1270-1273. (May 2005).
Lee, Kwang-Jin, et al. “A 90nm 1.8V 512MB Diode-Switch PRAM with 266MB/s Read Throughput,” ISSCC 2007, Session 26, Non-Volatile Memories, pp. 472-474. (2007).
Lee, Myoung-Jae, et al. “2-stack 1D-1 R Cross-point Structure with Oxide Diodes as a Switch Elements for High Density Resistance RAM applications,” IEEE, pp. 771-774. (2007).
Lee, S.H., et al. “Full Integration and Cell Characteristics for 64Mb Nonvolatile PRAM,” IEEE, Symposium on VLSI Technology, Digest of Technical Papers, pp. 20-21. (2004).
Suh, D.-S, et al. “Critical Quenching Speed Determining Phase of Ge2Sb2Te5 in Phase-Change Memory,” IEDM, pp. 1-4. (2006).
International Search Report and Written Opinion for related PCT Application PCT/US2009/001653, dated Nov. 4, 2009 (12 pgs.).

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