Phase change materials, phase change random access memories...

Details Phase change materials, phase change random access memories... Phase change materials, phase change random access memories...

2006-08-24

2009-08-11

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000, C438S102000, C438S103000

Reexamination Certificate

active

07573058

ABSTRACT:
A phase change memory device includes a switch and a storage node connected to the switch. The storage node includes a first electrode, a phase change layer and a second electrode. The phase change layer is formed of an InSbTe compound doped with Ge. In a method of operating a phase change memory including a switch and a storage node, the switch is maintained in an on state, and a first current is applied to the storage node.

REFERENCES:
patent: 5058061 (1991-10-01), Koshino et al.
patent: 5254382 (1993-10-01), Ueno et al.
patent: 2001/0036528 (2001-11-01), Abiko et al.
patent: 2004/0037106 (2004-02-01), Lu et al.
patent: 2005/0093043 (2005-05-01), Morita et al.
patent: 1996-287515 (1996-11-01), None

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