Phase change materials and associated memory devices

Details Phase change materials and associated memory devices Phase change materials and associated memory devices

2011-01-25

2011-01-25

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE45003

Reexamination Certificate

active

07875873

ABSTRACT:
A memory device utilizes a phase change material as the storage medium. The phase change material includes at least one of Ge, Sb, Te, Se, As, and S, as well as a nitride compound as a dopant. The memory device can be a solid-state memory cell with electrodes in electrical communication with the phase change medium, an optical phase change storage device in which data is read and written optically, or a storage device based on the principle of scanning probe microscopy.

REFERENCES:
patent: 5596522 (1997-01-01), Ovshinsky et al.
patent: 5825046 (1998-10-01), Czubatyj et al.
patent: 7279380 (2007-10-01), Lung
patent: 7491573 (2009-02-01), Schrott et al.

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