Phase change material, phase change memory device including...

Details Phase change material, phase change memory device including... Phase change material, phase change memory device including...

2011-08-09

2011-08-09

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257SE45003

Reexamination Certificate

active

07994492

ABSTRACT:
Disclosed may be a phase change material alloy, a phase change memory device including the same, and methods of manufacturing and operating the phase change memory device. The phase change material alloy may include Si and Sb. The alloy may be a Si—O—Sb alloy further including O. The Si—O—Sb alloy may be SixOySbz, wherein, when x/(x+z) may be x1, 0.05≦x1≦0.30, 0.00≦y≦0.50, and x+y+z may be 1. The Si—O—Sb alloy may further comprise an element other than Si, O, and Sb.

REFERENCES:
patent: 7750335 (2010-07-01), Clevenger et al.
patent: 2008/0094885 (2008-04-01), Ho et al.
patent: 2009/0039331 (2009-02-01), Clevenger et al.
patent: 2009/0078924 (2009-03-01), Liang et al.
patent: 2009/0230375 (2009-09-01), Liang et al.
patent: 2010/0054029 (2010-03-01), Happ et al.

Affiliated with

Also associated with

Rating

Phase change material, phase change memory device including... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase change material, phase change memory device including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase change material, phase change memory device including... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2770718