Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-06-07
2011-06-07
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C257S004000, C257SE29002, C257SE29068
Reexamination Certificate
active
07956342
ABSTRACT:
Insulating impurities may be uniformly distributed over an entire or partial region of the phase change material. The PRAM may include a phase change layer including the phase change material. The insulating impurity content of the phase change material may be 0.1 to 10% (inclusive) the volume of the phase change material. The insulating impurity content of the phase change material may be adjusted by controlling the power applied to a target including the insulating impurities.
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Chinese Office Action dated Aug. 14, 2009 and English translation for corresponding Chinese Application No. 200610121248.9.
Khang Yoon-ho
Lee Sang-mock
Noh Jin-seo
Suh Dong-seok
Bernstein Allison P
Harness & Dickey & Pierce P.L.C.
Phung Anh
Samsung Electronics Co,. Ltd.
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