Phase change material containing carbon, memory device...

Details Phase change material containing carbon, memory device... Phase change material containing carbon, memory device...

2008-03-05

2010-06-15

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S537000, C257SE27016, C257SE27047

Reexamination Certificate

active

07737527

ABSTRACT:
Provided are a phase change material containing carbon (C), a memory device including the phase change material, and a method of operating the memory device. The phase change material contains a main compound and an additive, wherein the main compound is In—Sb—Te and the additive includes carbon (C). A content a of the carbon (C) may be 0.005≦a≦0.30 atomic (at) %. The additive may further contain nitrogen (N), oxygen (O), boron (B), or a transition metal. The additive may include carbide instead of the carbon (C).

REFERENCES:
patent: 7166346 (2007-01-01), Kim et al.
patent: 7223450 (2007-05-01), Taugerbeck et al.
patent: 7642540 (2010-01-01), Lee et al.
patent: 2005/0099934 (2005-05-01), Kondo et al.

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