Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or...
Reexamination Certificate
2007-06-19
2007-06-19
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
C257S003000, C257S004000, C257S005000, C257S200000, C257S246000, C438S752000
Reexamination Certificate
active
11290713
ABSTRACT:
The present invention provides a phase change memory cell comprising (GeASbBTeC)1-X(RaSbTeC)Xsolid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention provides many advantages such as high speed, high data retention, and multi-bit operation.
REFERENCES:
patent: 2006/0091374 (2006-05-01), Yoon et al.
Anh Dong Ho
Cheong Byung-ki
Jeong Jeung-hyun
Kang Dae-Hwan
Kim In Ho
Anderson Kill & Olick PC
Andujar Leonardo
Korea Institute of Science and Technology
Seoul National University Industry Foundation
Wilson Scott R.
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