Phase change layer and method of manufacturing the same and...

Details Phase change layer and method of manufacturing the same and... Phase change layer and method of manufacturing the same and...

2011-08-09

2011-08-09

Valentine, Jami M (Department: 2894)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C438S103000, C257S002000, C257S004000, C257S005000, C257S003000, C257SE29002, C365S163000

Reexamination Certificate

active

07993963

ABSTRACT:
Provided are a phase change layer and a method of forming the phase change layer and a phase change memory device including the phase change layer, and methods of manufacturing and operating the phase change memory device. The phase change layer may be formed of a quaternary compound including an amount of indium (In) ranging from about 15 at. % to about 20 at. %. The phase change layer may be InaGebSbcTed, wherein an amount of germanium (Ge) ranges from about 10 at. %≦b≦about 15 at. %, an amount of antimony (Sb) ranges from about 20 at. %≦c≦about 25 at. %, and an amount of tellurium (Te) ranges from about 40 at. %≦d≦about 55 at. %.

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Office Action dated Oct. 25, 2010 for corresponding Chinese Patent Application No. 200810009536, No Translation Provided.

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