Phase change device having two or more substantial amorphous...

Details Phase change device having two or more substantial amorphous... Phase change device having two or more substantial amorphous...

2010-03-04

2011-11-15

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S072000, C365S100000, C365S104000, C365S046000, C365S189090

Reexamination Certificate

active

08059449

ABSTRACT:
Memory devices are described herein along with method for operating the memory device. A memory cell as described herein includes a first electrode and a second electrode. The memory cell also comprises phase change material having first and second active regions arranged in series along an inter-electrode current path between the first and second electrode.

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