Phase change based memory device and method for operating same

Details Phase change based memory device and method for operating same Phase change based memory device and method for operating same

2006-01-10

2006-01-10

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including signal comparison

C365S207000

Reexamination Certificate

active

06985389

ABSTRACT:
A circuit and method are disclosed for a memory device, such as a phase change memory. Specifically, there is disclosed a memory having a plurality of columns of memory cells, with each column of memory cells being coupled to a bit or data line. Each memory cell includes a programmable resistive element coupled in series with a select transistor. Each bit line is coupled to a distinct reference cell and a distinct transistor. The transistor is coupled between the corresponding bit line and a reference voltage, such as ground. During a memory read operation, the transistor, reference cell and addressed memory cell form a differential amplifier circuit. The output of the differential amplifier circuit is coupled to the data output terminals of the phase change memory.

REFERENCES:
patent: 6809976 (2004-10-01), Ooishi

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