PFETs and methods of manufacturing the same

Details PFETs and methods of manufacturing the same PFETs and methods of manufacturing the same

2006-01-19

2009-08-04

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S197000, C438S300000, C257SE21409, C257SE29345

Reexamination Certificate

active

07569434

ABSTRACT:
In a first aspect, a first method of manufacturing a PFET on a substrate is provided. The first method includes the steps of (1) forming a gate channel region of the PFET having a first thickness on the substrate; and (2) forming at least one composite source/drain diffusion region of the PFET having a second thickness greater than the first thickness on the substrate. The at least one composite source/drain diffusion region is adapted to cause a strain in the gate channel region. Further, significantly all of the at least one composite source/drain diffusion region is below a bottom surface of a gate of the PFET. Numerous other aspects are provided.

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