Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1987-12-30
1989-04-25
Thibodeau, Paul J.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419222, 427 38, 427131, 427132, 428694, 428900, G11B 564
Patent
active
048245399
ABSTRACT:
A Co-Cr perpendicular magnetic recording medium includes a chromium oxide film formed on a Co-Cr perpendicular magnetization film, and a SiO.sub.2 protective film formed on the chromium oxide film. The chromium oxide film is formed by conducting a heating treatment to the surface of the Co-Cr perpendicular magnetization film in an oxygen atmosphere of about 10 .sup.-4 to 10.sup.-3 Torr, at a temperature of about 300.degree. C. to 400.degree. C. for about two hours. The chromium oxide film has a thickness of about 20 to 200 .ANG.. The SiO.sub.2 protective film has a thickness greater than 50 .ANG., but the total thickness of the chromium oxide film and the SiO.sub.2 protective film is selected between 70 and 300 .ANG..
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Journal of Magnetism and Magnetic Materials 35 (1983) 286-288.
Ishizuka Mamoru
Komoda Tomohisa
Tsuchimoto Shuhei
Yoshikawa Mitsuhiko
Sharp Kabushiki Kaisha
Thibodeau Paul J.
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