Permanently on transistor implemented using a double...

Details Permanently on transistor implemented using a double... Permanently on transistor implemented using a double...

2005-07-19

2005-07-19

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S406000, C257S389000, C257S402000, C257S404000, C438S217000, C438S289000, C438S216000, C438S288000

Reexamination Certificate

active

06919600

ABSTRACT:
A permanently-ON MOS transistor comprises silicon source and drain regions of a first conductivity type in a silicon well region of a second conductivity type. A silicon contact region of the first conductivity types is buried in the well region, said contact region contacting said source region and said drain region. A first gate insulating layer is selectively placed over the silicon source and drain regions. A second gate insulating layer is selectively placed over the first gate insulating layer and over the silicon contact region. A polysilicon gate region is placed over the second gate insulating layer.

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