Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-07-31
2007-07-31
Nguyen, Van Thu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S222000, C365S227000
Reexamination Certificate
active
11302337
ABSTRACT:
A peripheral voltage generator is provided for reducing an operating current by generating a peripheral voltage within a mobile SDRAM, and a current is used in a deep-power down mode and a self refresh mode to thereby enhance operational characteristics. The peripheral voltage generator includes a reference voltage generating unit for generating a peripheral reference voltage having a different level in response to an enable signal and a self-refresh signal; a comparing unit for comparing the peripheral reference voltage with a peripheral driving voltage to thereby output a peripheral voltage control signal based on the comparison result; and a peripheral voltage control unit for generating the peripheral driving voltage having a first peripheral level in response to the peripheral voltage control signal.
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Korean Office Action issued in corresponding Korean Patent Application No. 10-2005-0082245, dated Nov. 18, 2006.
Lee Jong-Won
Song Ho-Uk
Hynix / Semiconductor Inc.
McDermott Will & Emery LLP
Nguyen N
Nguyen Van Thu
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