Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2011-06-28
2011-06-28
Deo, Duy-Vu N (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S689000, C438S693000
Reexamination Certificate
active
07968465
ABSTRACT:
A method of polishing a semiconductor substrate surface having at least one ruthenium feature thereon and at least one dielectric material, wherein the substrate is contacted with an aqueous composition containing from about 0.0005 to about 1 moles/kilogram of periodic acid, from about 0.2% to about 6% % by weight of silica abrasive having an average particle size of about 50 nm or less, and an amine in an amount sufficient to adjust the pH of the composition to between about 2.5 and 7. The removal selectivity of the ruthenium to a. low-K dielectric is greater than 20:1. Advantageously, the substrate further has a tantalum-containing compound, and the polishing rate of the tantalum-containing compound is about the same as the polishing rate of the ruthenium, so that the polishing process is a one-step process.
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Aragaki Steve Masami
Hayashida Atsushi
Nojo Haruki
Orui Kenichi
Small Robert J.
Chase Geoffrey L.
Deo Duy-Vu N
Dodd John R.
Duclair Stephanie
DuPont Air Products NanoMaterials LLC
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