Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-01
2005-11-01
Lee, Hsien Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S350000, C257S368000, C438S014000, C438S018000, C438S149000, C438S479000, C438S517000
Reexamination Certificate
active
06960802
ABSTRACT:
A method and type of device for performing passive voltage contrast on a silicon on insulator (SOI) device. A first portion of a substrate of the SOI device may be ground with a dimpler. A second portion of the substrate of the SOI device may be etched using tetramethylammonium hydroxide (TMAH). A third portion of the substrate of the SOI device and a portion of a box insulator of the SOI device may be etched using hydrofluoric (HF) acid. A conductive coating may be applied to the etched portions thereby forming a conductive path from the gate to the substrate if there is a breakdown in the gate oxide. Consequently, the passive voltage contrast technique may be applied to the SOI device to detect a breakdown in the gate oxide which would be illustrated by a bright area in the gate oxide region resulting from the secondary electrons produced.
REFERENCES:
patent: 6108121 (2000-08-01), Mansell et al.
patent: 6236222 (2001-05-01), Sur, Jr. et al.
patent: 6812050 (2004-11-01), Ramappa
Mahanpour Mehrad
Massoodi Mohammad
Phengthirath Dokham
Lee Hsien Ming
Winstead Sechrest & Minick P.C.
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