Performing data operations using non-volatile third...

Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition

Reexamination Certificate

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C711S101000, C711S202000, C711SE12002, C365S185100

Reexamination Certificate

active

07747817

ABSTRACT:
Performing data operations using non-volatile third dimension memory is described, including a storage system having a non-volatile third dimension memory array configured to store data, the data including an address indicating a file location on a disk drive, and a controller configured to process an access request associated with the disk drive, the access request being routed to the non-volatile third dimension memory array to perform a data operation, wherein data from the data operation is used to create a map of the disk drive. In some examples, an address in the non-volatile third dimension memory array provides an alias for another address in a disk drive.

REFERENCES:
patent: 3886577 (1975-05-01), Buckley
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 5526507 (1996-06-01), Hill
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6204139 (2001-03-01), Liu et al.
patent: 6473332 (2002-10-01), Ignatiev et al.
patent: 6487106 (2002-11-01), Kozicki
patent: 6531371 (2003-03-01), Hsu et al.
patent: 6545891 (2003-04-01), Tringali et al.
patent: 6657888 (2003-12-01), Doudin et al.
patent: 6731528 (2004-05-01), Hush et al.
patent: 6753561 (2004-06-01), Rinerson et al.
patent: 6807088 (2004-10-01), Tsuchida
patent: 6825489 (2004-11-01), Kozicki
patent: 6836421 (2004-12-01), Rinerson et al.
patent: 6856536 (2005-02-01), Rinerson et al.
patent: 7002197 (2006-02-01), Perner et al.
patent: 2003/0132456 (2003-07-01), Miyai et al.
patent: 2004/0141369 (2004-07-01), Noguchi
patent: 2005/0135148 (2005-06-01), Chevallier et al.
patent: 2005/0151156 (2005-07-01), Wu et al.
patent: 2006/0050598 (2006-03-01), Rinerson et al.
patent: 2006/0164882 (2006-07-01), Norman
patent: 2006/0171200 (2006-08-01), Rinerson et al.
U.S. Appl. No. 11/449,105, filed Jun. 8, 2006, Robert Norman.
U.S. Appl. No. 60/536,115, filed Jan. 13, 2004, Wu et al.
A.Baikalov, et al, “Field -driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface” Applied Physics Letters, vol. 83, No. 5, Aug. 4, 2003, pp. 957-959.
A. Beck, J. Bednorz, A. Bietsch, Ch. Gerber, C. Rossel, D. Widmer, “Reproducible switching effect in thin oxide films for memory applications,” Applied Physics Letters, vol. 77, No. 1, Jul. 3, 2000, pp. 139-141.
A. Sawa, et al, “Hysteretic current-volyage characteristics and resisitance switching at a rectifying Ti/Pr0.7Ca0.3MnO3interface” Applied Physics Letters, vol. 85, No. 18, Nov. 1, 2004, pp. 4073-4075.
C. Rossel, G.I. Meijer, D. Brémaud, D. Widmer, “Electrical current distribution across a metal-insulator-metal structure during bistable switching,” Journal of Applied Physics, vol. 90, No. 6, Sep. 15, 2001, pp. 2892-2898.
David Oxley, “Memory Effects in Oxide Films” in Oxides and Oxide Films, vol. 6, pp. 251-325 (Chapter 4) (Ashok. K. Vijh ed., Marcel Drekker) (1981).
J.G. Simmons and R.R. Verderber, “New Conduction and Reversible Memory Phenomena in Thin Insulating Films,” Proc. Roy. Soc. A., 301 (1967), pp. 77-102.
Liu et al., “A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films,” Non-Volatile Memory Technology Symposium, Nov. 7, 2001, pp. 1-7.
Liu et al., “Electric-pulse-induced reversible resistance change effect in magnetoresistive films,” Applied Physics Letters, vol. 76, No. 19, May 8, 2000, pp. 2749-2751.
R.E. Thurstans and D.P. Oxley, “The Electroformed metal-insulator-metal structure: A comprehensive model,” J. Phys. D.: Appl. Phys. 35 (2002), Apr. 2, 2002, pp. 802-809.
Y. Watanabe, J.G. Bednorz, A. Bietsch, Ch. Gerber, D. Widmer, A. Beck, “Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals,” Applied Physics Letters, vol. 78, No. 23, Jun. 4, 2001, pp. 3738-3740.
R. Oligschlaeger, R. Waser, R. Meyer, S. Karthäuser, R. Dittmann, “Resistive switching and data reliability of epitaxial (Ba,Sr)TiO thin films,” Applied Physics Letters, 88 (2006), 042901.
S. Lai, T. Lowrey, “OUM—A 180 nm nonvolatile memory cell element technology for standalone and embedded applications,” IEEE International Electron Device Meeting, Technical Digest, 803 (2001).
J. Mizusaki J, Y. Yonemura, H. Kamata, K. Ohyama, N. Mori, H. Takai, H. Tagawa, M. Dokiya, K. Naraya, T. Sasamoto, H. Inaba, T. Hashimoto, “Electronic conductivity, Seebeck coefficient, defect and electronic structure of nonstoichimetric La1-xSrxMnO3,” Solid State Ionics 132, 167 (2000).
Zhao Y. G. ; Rajeswari M. ; Srivastava R. C. ; Biswas A. ; Ogale S. B. ; Kang D. J. ; Prellier W. ; Zhiyun Chen ; Greene R. L. ; Venkatesan T., “Effect of oxygen content on the structural, transport, and magnetic properties of La1-deltaMn1-deltaO3thin films,” Journal of Applied Physics, vol. 86, No. 11, Dec. 1999, pp. 6327-6330.
J. R. Stetter, W. R. Penrose, S. Yao, “Sensors, Chemical Sensors, Electrochemical Sensors, and ECS,” Journal of The Electrochemical Society, 150 (2), S11-S16 (2003).
B. C. H. Steele, A. Heinzel, “Materials for Fuel-Cell Technologies,” Nature 414, Nov. 2001, pp. 345-352.
A. Reller, J. M. Thomas, D. A. Jefferson, M. K. Uppal, “Superstructures Formed by the Ordering of Vacancies in a Selective Oxidation Catalyst: Grossly Defective CaMnO3,” Proceedings of the Royal Society of London, vol. 394, No. 1807 Aug. 1984, pp. 223-241.
A. J. Millis, “Cooperative Jahn-Teller effect and electron-phonon coupling in La1-xAxMnO3,” Phys. Rev. B 53, 8434-8441 (1996).

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