Coating apparatus – Gas or vapor deposition – With treating means
Patent
1998-06-03
2000-04-18
Dang, Thi
Coating apparatus
Gas or vapor deposition
With treating means
118723E, 156345, C23C 1600
Patent
active
060510730
ABSTRACT:
A plasma treatment system (200) for implantation with a novel susceptor with a perforated shield (201). The system (200) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate, which has a surface. The perforated shield (201) draws ions from the implantation toward and through the shield to improve implant uniformity in the substrate. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (26) on a surface of the chamber. The system (200) also has an rf generator (66) and at least two rf sources in other embodiments.
REFERENCES:
patent: 4006340 (1977-02-01), Gorinas
patent: 4566403 (1986-01-01), Fornier
patent: 4846928 (1989-07-01), Dolins et al.
patent: 4847792 (1989-07-01), Barna et al.
patent: 4853250 (1989-08-01), Boulose et al.
patent: 4887005 (1989-12-01), Rough et al.
patent: 4948458 (1990-08-01), Ogle
patent: 4952273 (1990-08-01), Popov
patent: 4960073 (1990-10-01), Suzuki et al.
patent: 4996077 (1991-02-01), Moslehi et al.
patent: 5015353 (1991-05-01), Hubler et al.
patent: 5133826 (1992-07-01), Dandl
patent: 5202095 (1993-04-01), Houchin et al.
patent: 5203960 (1993-04-01), Dandl
patent: 5234529 (1993-08-01), Johnson
patent: 5250328 (1993-10-01), Otto
patent: 5252178 (1993-10-01), Moslehi
patent: 5273610 (1993-12-01), Thomas, III et al.
patent: 5342472 (1994-08-01), Imahashi et al.
patent: 5368710 (1994-11-01), Chen et al.
patent: 5370765 (1994-12-01), Dandl
patent: 5404079 (1995-04-01), Ohkuni et al.
patent: 5405480 (1995-04-01), Benzing et al.
patent: 5411592 (1995-05-01), Ovshinsky et al.
patent: 5435880 (1995-07-01), Minato et al.
patent: 5487785 (1996-01-01), Horiike et al.
patent: 5504328 (1996-04-01), Bonser
Burggraaf, Pieter, "Advanced Plasma Sources: What's Working?," Semiconductor International, pp. 56-59 (May 1984).
Chan Chung
Chu Paul K.
Dang Thi
Silicon Genesis Corporation
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