Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2004-08-25
2009-10-20
Huff, Mark F (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
Reexamination Certificate
active
07604904
ABSTRACT:
There is disclosed a pellicle for lithography comprising a pellicle film, a pellicle frame to which the pellicle film is adhered, and a sticking layer placed on another end face of the pellicle frame, wherein the pellicle film consists of multi-layer structure of fluorine-doped silica and fluorocarbon resin. Thereby, there is provided a pellicle for lithography which has high transmittance and high light stability against light of short wavelength such as far-ultraviolet light in a range of 200-300 nm and especially vacuum ultraviolet light of 200 nm or less, and is sufficiently practicable.
REFERENCES:
patent: 4657805 (1987-04-01), Fukumitsu et al.
patent: 4861402 (1989-08-01), Gordon
patent: 5339197 (1994-08-01), Yen
patent: 6335231 (2002-01-01), Yamazaki et al.
patent: 6350549 (2002-02-01), Sakurai et al.
patent: 2005/0025959 (2005-02-01), Bellman
patent: 58-219023 (1983-12-01), None
patent: 60-083032 (1985-05-01), None
patent: 2000-026125 (2000-01-01), None
patent: 2000-264671 (2000-09-01), None
patent: 2000-292908 (2000-10-01), None
patent: A-2000-305255 (2000-11-01), None
patent: A-2001-255644 (2001-09-01), None
Huff Mark F
Jelsma Jonathan
Oliff & Berridg,e PLC
Shin-Etsu Chemical Co. , Ltd.
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