PECVD process for forming BPSG with low flow temperature

Details PECVD process for forming BPSG with low flow temperature PECVD process for forming BPSG with low flow temperature

1993-05-14

1995-04-25

Padgett, Marianne

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

4272553, 4273762, 437240, 156643, B05D 306, C23C 1600, H01L 2102, C03C 1500

Patent

active

054097436

ABSTRACT:
A method of forming a BPSG film in a PECVD reactor with ratios of P.sub.2 O.sub.3 /P.sub.2 O.sub.5 such that the film flows at low temperature in a non-oxidizing ambient and produces a reduced number of particulates. The method permits tailoring of the wall angle of a BPSG film by controlling the P.sub.2 O.sub.3 /P.sub.2 O.sub.5 ratio.

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patent: 5262356 (1993-11-01), Fujii
Proceedings of the Sira International Seminar on Thin Film Preparation and Processing Technology, Brighton, UK, 26-28 Mar. 1985, ISSN, 0042-207X, Vacuum, Oct.-Nov. 1985, pp. 441-443, A. C. Sharp et al.
Solid State Technology, Jan. 1984, USA, vol. 27, NR. 1, pp. 161-170, ISSN 0038-111X, J. E. Tong et al.
Solid State Technology, Jun. 1985, USA, vol. 28, NR. 6, pp. 171-179, ISSN 0038-111X, W. Kern et al.

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