PECVD of silicon nitride films

Details PECVD of silicon nitride films PECVD of silicon nitride films

1996-11-06

1998-06-30

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427578, 4272552, 4272551, B05D 306

Patent

active

057731004

ABSTRACT:
An inlet gas manifold for a vacuum deposition chamber incorporates inlet apertures which increase in diameter or cross-section transverse to the direction of gas flow. The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia. The inlet manifold containing the increasing-diameter gas inlet holes provides enhanced control of the process and the deposited film.

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