PE-TEOS process

Details PE-TEOS process PE-TEOS process

1996-03-22

1999-05-18

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

438787, 438788, 438789, 438758, H01L21/316

Patent

active

059045736

ABSTRACT:
An improvement in the properties of etch rate, mechanical stress, and chemical resistance of silicon layers obtained by plasma-enhanced chemical vapor deposition from mixtures of reactive gases such as oxygen and tetraethoxysilane is achieved by adding nitrogen gas to the reactive gas mixture. The addition of nitrogen gas is effective in improving the cited properties of the silicon oxide layers without altering the basic properties of the deposition process or degrading the other desirable properties of the silicon oxide layers in any substantial manner.

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S. Wolf, "Silicon Processing for the VLSI Era-vol.2" Lattice Press, Sunset Beach, CA, pp.194-199 No Date.

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